Semiconductor optical device

ABSTRACT

In a semiconductor optical device, the first conductive type semiconductor region includes a first semiconductor portion and a second semiconductor portion. The first and second regions of the first semiconductor portion are arranged along a predetermined plane. The second semiconductor portion is provided on the first region of the first semiconductor portion. The active layer is provided on the second semiconductor portion of the first conductive type semiconductor region. The second conductive type semiconductor region is provided on the second region of the first semiconductor portion of the first conductive type semiconductor region. The side of the second semiconductor portion of the first conductive type semiconductor region, the top and side of the active layer, the second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. The first distributed Bragg reflector portion includes first distributed Bragg reflector layers and second distributed Bragg reflector layers which are arranged alternately. The second distributed Bragg reflector portion includes third distributed Bragg reflector layers and fourth distributed Bragg reflector layers which are arranged alternately. The first conductive type semiconductor region, the active layer and the second conductive type semiconductor region are provided between the first distributed Bragg reflector portion and the second distributed Bragg reflector layers.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor optical device.

2. Related Background of the Invention

Publication 1 (IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL.QE-17, NO. 2,FEBRUARY 1981, pp. 202-207) discloses a buried hetero-structuresemiconductor laser. This semiconductor laser has an active layer madeof GaInAsP semiconductor. This active layer is provided between a p-typeInP semiconductor layer and an n-type InP semiconductor layer and islocated between InP current block portions of InP semiconductor.Carriers are injected into the active layer and the injected carriersare confined into the active layer by the hetero-barriers at theinterfaces between the active layer and the current block portions.

SUMMARY OF THE INVENTION

FIG. 19 shows a method of manufacturing a buried hetero-structuresemiconductor laser as described above. As shown in area (a) in FIG. 19,an n-type InP semiconductor layer (n-type cladding layer) 103, a GaInAsPactive layer 105, a p-type InP semiconductor layer (p-type claddinglayer) 106, a protecting layer 108 are epitaxially grown on an InPsubstrate 111. A mask 110 for forming a waveguide structure is formed onthe protecting layer 108. Then, as shown in area (b) in FIG. 19, theprotecting layer 108, p-type InP semiconductor layer 106, GaInAsP activelayer 105 and n-type InP semiconductor layer 103 are etched using themask 110 to form a mesa 112 for the waveguide structure.

Then, as shown in area (c) in FIG. 19, a current block portion 109having a p-type semiconductor layer 109 a and an n-type semiconductorlayer 109 b is epitaxially grown on both sides of the mesa 112. Sincethe mask 110 is located on the top of the mesa 112 including the activelayer, the current block portion 109 is not formed on the mesa 112.Next, as shown in area (d) in FIG. 19, the protecting layer 108 and themask 110 are removed and a p-type InP semiconductor layer 107 and ap-type GaInAsP semiconductor layer (p-type contact layer) 117 areepitaxially grown thereon. An anode electrode and a cathode electrodeare formed on the p-type semiconductor layer 117 and the InP substrate111, respectively, to form the buried heterostructure semiconductorlaser.

The fabrication of buried heterostructure semiconductor lasers as aboverequires at least three epitaxial growth steps as shown in FIG. 19.Epitaxial growth steps are complex and take long time. Therefore, it ispreferable that the number of epitaxial growth steps be as small aspossible.

A surface emitting semiconductor laser has an n-type InP semiconductorlayer, a active GaInAsP layer and a p-type InP semiconductor layer,which are provided between two distributed Bragg reflector (DBR)portions. Each of these DBR portions is formed by alternately growingfirst DBR layers and second DBR layers the refractive index of which isdifferent from that of the first DBR layers. Accordingly, processingtime for epitaxial growth steps in the fabrication of the surfaceemitting semiconductor laser is longer as compared with buriedheterostructure semiconductor lasers as shown in FIG. 19. Surfaceemitting semiconductor lasers are required to have a structure forconfining current and surface emitting type electro-absorption opticalmodulators are required to have a structure for locally generating alarge electric field in applying a reverse bias voltage. What isrequired for the surface emitting semiconductor lasers and surfaceemitting type electro-absorption optical modulators is to include astructure for the generation of strong electric field and theconfinement of current in addition to shorten the work period.

It is an object to provide a semiconductor optical device having asimple structure capable of locally generating strong electric fieldwhen a reverse bias voltage is applied thereto and confining currentwhen a forward bias voltage is applied thereto.

According to one aspect of the present invention, a semiconductoroptical device comprises: a first conductive type semiconductor region,an active layer, a second conductive type semiconductor region, a firstdistributed Bragg reflector portion and a second distributed Braggreflector portion. The first conductive type semiconductor regionincludes a first semiconductor portion and a second semiconductorportion. The first semiconductor portion has a first region and a secondregion. The first and second regions are arranged along a predeterminedplane. The second semiconductor portion is provided on the first regionof the first semiconductor portion. The second semiconductor portion hasa side. The active layer is provided on the second semiconductor portionof the first conductive type semiconductor region. The active layer hasa top and a side. A bandgap energy of the first conductive typesemiconductor region is greater than that of the active layer. Thesecond conductive type semiconductor region is provided on the secondregion of the first semiconductor portion of the first conductive typesemiconductor region. The side of the second semiconductor portion ofthe first conductive type semiconductor region, the top and side of theactive layer, the second region of the first conductive typesemiconductor region and the second conductive type semiconductor regionconstitute a pn junction. A bandgap energy of the second conductive typesemiconductor region is greater than that of the active layer. The firstdistributed Bragg reflector portion includes first distributed Braggreflector layers and second distributed Bragg reflector layers. Thefirst and second distributed Bragg reflector layers are arrangedalternately. The second distributed Bragg reflector portion includesthird distributed Bragg reflector layers and fourth distributed Braggreflector layers. The third and fourth distributed Bragg reflectorlayers are arranged alternately. The first conductive type semiconductorregion, the active layer and the second conductive type semiconductorregion are provided between the first distributed Bragg reflectorportion and the second distributed Bragg reflector layers.

According to another aspect of the present invention, a semiconductoroptical device comprises: a first conductive type semiconductor region,an active layer, a second conductive type semiconductor region, a firstdistributed Bragg reflector portion and a second distributed Braggreflector portion. The first conductive type semiconductor region has afirst region and a second region. The first and second regions arearranged along a predetermined plane. The active layer is provided onthe first region of the first conductive type semiconductor region. Theactive layer has a top and a side. A bandgap energy of the firstconductive type semiconductor region is greater than that of the activelayer. The second conductive type semiconductor region is provided onthe second region of the first conductive type semiconductor region andthe top and side of the active layer. A bandgap energy of the secondconductive type semiconductor region is greater than that of the activelayer. The second conductive type semiconductor region and the secondregion of the first conductive type semiconductor region constitute a pnjunction. The first distributed Bragg reflector portion includes firstdistributed Bragg reflector layers and second distributed Braggreflector layers. The first and second distributed Bragg reflectorlayers are arranged alternately. The second distributed Bragg reflectorportion includes third distributed Bragg reflector layers and fourthdistributed Bragg reflector layers. The third and fourth distributedBragg reflector layers are arranged alternately. The first conductivetype semiconductor region, the active layer and the second conductivetype semiconductor region are provided between the first distributedBragg reflector portion and the second distributed Bragg reflectorlayers.

In the semiconductor optical device according to the present invention,the first conductive type semiconductor region is made of materialpermitting the first conductive type semiconductor region to working asan etching stop layer for etching the active layer.

In the semiconductor optical device according to the present invention,a difference between a bandgap energy of the first conductive typesemiconductor region and that of the active layer is equal to or morethan 4.8×10⁻²⁰ Joule and a difference between a bandgap energy of thesecond conductive type semiconductor region and that of the active layeris equal to or more than 4.8×10⁻²⁰ Joule.

In the semiconductor optical device according to the present invention,the first conductive type semiconductor region is made of AlGaAs,AlGaInP, GaInP and GaInAsP. The second conductive type semiconductorregion is made of AlGaAs, AlGaInP, GaInP and GaInAsP. The active layeris made of III-V compound semiconductor containing at least nitrogen.

The semiconductor optical device according to the present invention,further comprises: a second conductive type semiconductor contact layerprovided on the second conductive type semiconductor region; and anelectrode provided on the second conductive type semiconductor contactlayer.

In the semiconductor optical device according to the present invention,the first conductive type semiconductor region includes a third regionand a fourth region. The third region and the second conductive typesemiconductor region constitute the pn junction. A dopant concentrationof the third region is different from that of the fourth region.

In the semiconductor optical device according to the present invention,the second conductive type semiconductor region includes a first regionand a second region. The first region of the second conductive typesemiconductor region and the first conductive type semiconductor regionconstitute the pn junction. A dopant concentration of the first regionof the second conductive type semiconductor region is different fromthat of the second region of the second conductive type semiconductorregion.

The semiconductor optical device according to the present invention,further comprises: a first spacer layer provided between the activelayer and the first conductive type semiconductor region; and a secondspacer layer provided between the active layer and the second conductivetype semiconductor region.

In the semiconductor optical device according to the present invention,the semiconductor optical device includes a semiconductor laser.

In the semiconductor optical device according to the present invention,the semiconductor optical device includes a light emitting diode.

In the semiconductor optical device according to the present invention,the semiconductor optical device includes a semiconductor opticalamplifier.

In the semiconductor optical device according to the present invention,the semiconductor optical device includes an electro-absorption typemodulator.

In the semiconductor optical device according to the present invention,the semiconductor optical device includes a semiconductor opticalwaveguide.

In the semiconductor optical device according to the present invention,the semiconductor optical device includes an integrated optical devicehaving at least one of a semiconductor laser, a light emitting diode, asemiconductor optical amplifier, an electro-absorption type modulatorand a semiconductor optical waveguide.

BRIEF DESCRIPTION OF THE DRAWINGS

The above-described object and other objects, features, and advantagesof the present invention will become apparent more easily in thedetailed description of the preferred embodiments of the presentinvention which will be described below with reference to theaccompanying drawings.

FIG. 1 is a view showing a semiconductor optical device and thestructures of first and second DBR portions according to the firstembodiment.

FIG. 2 is a view showing the semiconductor optical device according tothe first embodiment.

FIG. 3 is an equivalent circuit diagram showing the electrical propertyof the semiconductor optical device according to the first embodiment.

FIG. 4 schematically shows current vs. voltage and current vs. opticaloutput power characteristics for the semiconductor optical deviceaccording to the first embodiment.

FIG. 5 is a schematic view for explaining dependence of the width of thelinear operation region on the bandgap difference between the first andsecond conductive type semiconductor regions and the active layer forthe semiconductor optical device according to the first embodiment.

FIG. 6 is a view for explaining the fabrication of the semiconductoroptical device.

FIG. 7 is a view showing a modified semiconductor optical deviceaccording to the first embodiment.

FIG. 8 is a view showing a semiconductor optical device and thestructures of first and second DBR portions according to the secondembodiment.

FIG. 9 is a view for the semiconductor optical device according to thesecond embodiment.

FIG. 10 schematically shows the relationship between oscillatingthreshold current I_(th) and bandgap difference ΔEg between the activelayer and the first conductive type semiconductor region or the secondconductive type semiconductor region.

FIG. 11 is a view showing the relationship among the Al composition “x”of the active layer, the bandgap energy Eg of the active layer and thebandgap difference ΔEg.

FIG. 12 schematically shows current vs. voltage and current vs. opticaloutput power characteristics for the bandgap energies.

FIG. 13 schematically shows current vs. voltage and current vs. opticaloutput power characteristics for the semiconductor optical device madeof material lattice-matched to InP semiconductor.

FIG. 14 is a view showing the list of the combination of thesemiconductor material that can be used for the semiconductor opticaldevice according to the present invention.

FIG. 15 is a view showing another modified semiconductor optical device.

FIG. 16 is a cross sectional view showing still another modifiedsemiconductor optical device.

FIG. 17 schematically shows current vs. voltage and current vs. opticaloutput power characteristics for the semiconductor optical device.

FIG. 18 is a view showing still another modified semiconductor opticaldevice according to the second embodiment.

FIG. 19 is a view showing an example of the steps for fabricating aburied heterostructure semiconductor laser.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The teachings of the present invention will readily be understood inview of the following detailed description with reference to theaccompanying drawings illustrated by way of example. When possible,parts identical to each other will be referred to with reference symbolsidentical to each other.

First Embodiment

Area (a) in FIG. 1 shows a perspective view showing a semiconductoroptical device according to the first embodiment. An XYZ coordinatesystem S is depicted in area (a). Area (b) in FIG. 1 shows a structureof a first DBR portion and area (c) in FIG. 1 shows a structure of afirst DBR portion. FIG. 2 is a view showing the semiconductor opticaldevice according to the first embodiment. Area (a) in FIG. 2 shows across sectional view taken along I-I in FIG. 1. Area (b) in FIG. 2 showsa band diagram, taken along IIa-IIa in area (a), for the semiconductoroptical device according to the first embodiment. Area (c) in FIG. 2shows a refractive index diagram, taken along IIb-IIb in area (a), forthe semiconductor optical device according to the first embodiment.

FIGS. 1 and 2 shows a semiconductor optical device 1, such as a verticalcavity surface emitting semiconductor laser. The semiconductor opticaldevice 1 comprises a first conductive type semiconductor region 3, anactive layer 5, a second conductive type semiconductor region 7, a firstdistributed Bragg reflector (DBR) portion 8 a and a second distributedBragg reflector (DBR) portion 8 b. As shown in area (b) in FIG. 1, thefirst DBR portion 8 a includes first DBR semiconductor layers 24 andsecond semiconductor layers 26, and the first and second semiconductorlayers 24 and 26 are alternately arranged. As shown in area (c) in FIG.1, the second DBR portion 8 b includes third DBR semiconductor layers 28and fourth semiconductor layers 30, and the third and fourthsemiconductor layers 28 and 30 are alternately arranged. The firstconductive type semiconductor region 3, the active layer 5 and thesecond conductive type semiconductor region 7 are provided between thefirst DBR portion 8 a and the second DBR portion 8 b. The firstconductive type semiconductor region 3 is provided on the surface ofGaAs and has a first semiconductor portion 3 a and a secondsemiconductor portion 3 b. As shown in FIG. 2, the first semiconductorportion 3 a includes a first region 3 c and a second region 3 d whichsurrounds the first region 3 c. The second semiconductor portions 3 b islocated on the first region 3 c of the first semiconductor portion 3 a.The first region 3 c extends in the direction of the y-axis. The secondsemiconductor portion 3 b is provided on the first region 3 c of thefirst semiconductor portion 3 a and has a side 3 e. The active layer 5is provided on the second semiconductor portion 3 b of the firstconductive type semiconductor region 3. The active layer 5 has a side 5a and a top 5 b. The second conductive type semiconductor region 7 isprovided on the second region 3 d of the first semiconductor portion 3 aof the first conductive type semiconductor region 3, the side 3 e of thesecond semiconductor portion 3 b, and the side 5 a and the top 5 b ofthe active layer 5. The second conductive type semiconductor region 7and the second region 3 d of the first semiconductor portion 3 a of thefirst conductive type semiconductor region 3 form a pn junction outsidethe active region. The active layer 5 is made of III-V compoundsemiconductor.

The semiconductor optical device 1 has a simple structure permitting thelocal generation of a strong electric field by applying a reverse biasvoltage or the confinement of current by applying a forward biasvoltage.

The first conductive type semiconductor region 3 is made of III-Vcompound semiconductor, the bandgap of which is greater than that of theactive layer 5. In other words, the photoluminescence wavelength ofIII-V compound semiconductor of the first conductive type semiconductorregion 3 is shorter than that of the active layer 5. The secondconductive type semiconductor region 7 is made of III-V compoundsemiconductor, the bandgap of which is greater than that of the activelayer 5. In other words, the photoluminescence wavelength of III-Vcompound semiconductor of the second conductive type semiconductorregion 7 is shorter than that of the active layer 5. A photoluminescencewavelength of semiconductor material is equal to the wavelength thatcorresponds to the bandgap thereof. As seen from the bandgap diagramshown in area (b) of FIG. 2, the first conductive type semiconductorregion 3 and second conductive type semiconductor region 7 confinecarriers to the active layer 5. Consequently, the first conductive typesemiconductor region 3 works as a cladding layer of the first conductivetype and the second conductive type semiconductor region 7 works as acladding layer of the second conductive type. In the active layer 5, theconfined carriers injected from the first conductive type semiconductorregion 3 and second conductive type semiconductor region 7 arerecombined to generate light.

As shown in the refractive index diagram of area (c) of FIG. 2, therefractive index of the first conductive type semiconductor region 3 issmaller than that of active layer 5. The refractive index of the secondconductive type semiconductor region 7 is also smaller than that ofactive layer 5. Accordingly, the first conductive type semiconductorregion 3 and the second conductive type semiconductor region 7 confinelight from the active layer 5 in the active layer 5 in both x and zdirections. Consequently, the first conductive type semiconductor region3 and the second conductive type semiconductor region 7 act as opticalcladding layers.

The structure of the active layer 5 may be the bulk structure of asingle layer, the single quantum well structure of a single quantum welllayer or the multiple quantum well structure of a plurality of welllayers and barrier layers which are alternately arranged.

The semiconductor optical device 1 further comprises a semiconductorsubstrate 11. For example, a GaAs substrate can be used as thesemiconductor substrate. GaAs substrates can provide the GaAs surface onwhich the first conductive type semiconductor region. The firstconductive type semiconductor region 3 is provided on the primarysurface 11 a of the semiconductor substrate 11. The second semiconductorportion 3 b of the first conductive type semiconductor region 3 has amesa shape and the active layer 5 is provided between the secondsemiconductor portion 3 b of the first conductive type semiconductorregion 3 and the second conductive type semiconductor region 7. Thesecond semiconductor portion 3 b and the active layer 5 constitute asemiconductor mesa portion 13 shown in FIG. 1. The semiconductor mesaportion 13 extends in the y-direction. In the mesa portion 13, carriersare injected to the active layer 5 from the first conductive typesemiconductor region 3 and the second conductive type semiconductorregion 7.

The semiconductor optical device 1 further comprises electrodes 21 and23. The electrode 21 is provided on the DBR portion 8 b of the secondconductive type and has an aperture 21 a located on the semiconductormesa portion 13. Light from the active layer 5 passes through theaperture 21 a. The electrode 23 is provided on the backside 11 b of thesemiconductor substrate 11. If required, the semiconductor opticaldevice 1 may includes a contact layer of the second conductive typeprovided on the second DBR portion 8 b. The bandgap energy of thecontact layer is smaller than that of semiconductor of the second DBRportion 8 b. Accordingly, the contact layer and the electrode 21 canform an excellent ohmic contact therebetween. For example, p-type GaAscan be used as the contact layer.

One example of the composition of the semiconductor optical device 1 isas follows:

-   First conductive type semiconductor region 3:-   AlGaAs, AlGaInP, GaInP, GaInAsP of n-type-   Active layer 5:-   Undoped (un-)GaInNAs-   Second conductive type semiconductor region 7:-   AlGaAs, AlGaInP, GaInP, GaInAsP of p-type-   Semiconductor substrate 11:-   n-type heavily-doped GaAs substrate-   First DBR semiconductor portion 24: AlGaAs semiconductor-   Second DBR semiconductor portion 26: GaAs semiconductor-   Third DBR semiconductor portion 28: AlGaAs semiconductor-   Fourth DBR semiconductor portion 26: GaAs semiconductor.    The first conductive type semiconductor region 3 and the second    conductive type semiconductor region 7 can be made of material that    is lattice-matched to GaAs. One or more of the semiconductors listed    above can be used for the semiconductor portions 3, 5, 7, 11, 24,    26, 28 and 30.

With reference to FIGS. 3 and 4, the operation of the semiconductoroptical device 1 will be described. FIG. 3 is an equivalent circuitdiagram showing the electrical property of the semiconductor opticaldevice 1 according to the first embodiment. Area (a) in FIG. 4 shows agraph representing a relationship between the driving voltage anddriving current for the semiconductor optical device 1. Area (b) in FIG.4 shows a graph representing a relationship between the driving currentand the optical output (optical power) for the semiconductor opticaldevice 1. Since the bandgap energies of the first and second conductivetype semiconductor regions 3 and 7 are greater than the bandgap energyof the active layer 5, the built-in potential of the pn junction (Bportion in FIG. 3) constituted by the first conductive typesemiconductor region 3 and the second conductive type semiconductorregion 7 is greater than that of the pin junction (A portion in FIG. 3)constituted by the first conductive type semiconductor region 3, theactive layer 5 and the second conductive type semiconductor region 7.Consequently, the pn junction in the B portion has a higher turn-onvoltage and the pin junction in the A portion has a lower turn-onvoltage. Therefore, when the driving voltage is between the turn-onvoltages of the A portion and the B portion, only the A potion turns onand forward current flows exclusively through the A portion.

As shown in FIG. 3, the equivalent circuit of the semiconductor opticaldevice 1 includes diodes D1 and D2 connected in parallel, which areformed in the A and B portions, respectively. The turn-on voltage V_(A)(shown area (a) of FIG. 4) of the diode D1 is determined by the built-inpotential in the A portion, and mainly depends on the bandgap energy ofthe active layer 5. The turn-on voltage V_(B) of the diode D2 isdetermined by the built-in potential in the B portion, and mainlydepends on the bandgap energies of the first and second conductive typesemiconductor region 3 and 7. Since the built-in potential of the Bportion is higher than that of the A portion, the turn-on voltage V_(B)of the diode D2 is greater than the turn-on voltage V_(A) of the diodeD1. The greater the difference between the built-in potentials of the Bportion and the A portion is, the greater the difference between theturn-on voltages V_(A) and V_(B) is. That is, the greater the bandgapdifference between the active layer 5 and the first and secondconductive type semiconductor regions 3 and 7 is, the greater thedifference between the turn-on voltages V_(A) and V_(B) is. Symbol R1 inFIG. 3 indicates an equivalent resistor in the first conductive typesemiconductor region 3, 8 a and 11, and symbol R2 in FIG. 3 indicates anequivalent resistor in the second conductive type semiconductor region 7and 8 b.

As shown in area (a) in FIG. 4, when a driving voltage is applied acrossthe electrodes 21 and 23, the diode D1 turns on at the turn-on voltageV_(A), whereby the resistance of the A portion is lowered and theforward current I_(A) flows therethrough. Many carriers are supplied tothe active layer 5 and these carriers are recombined to generate light.Semiconductor lasers having normal values of cavity loss and internalloss start to oscillate at current slightly greater than current I_(A)and this current I_(A) is equivalent to the semiconductor laserthreshold current thereof. When the injected current is increased overthe threshold current, the optical output power is rapidly increased.The diode D2 in the B portion does not turn on yet and the resistance inthe B portion is still high. Therefore, the B portion functions as acurrent blocking region and thus this current is confined into the Aportion (the active layer 5). Besides, since the refractive index of theactive layer 5 is greater than the refractive indices of the first andsecond conductive type semiconductor regions 3 and 7, light generated inthe active layer 5 is confined into the active layer 5 and itsneighborhood. In this operation in which the diode D1 turns on and thediode D2 does not turn on as described above, the confinement of bothcurrent and light is achieved and the following contributions areprovided: the effective stimulated emission is caused in the activelayer to generates light; the threshold current is low; and the opticalpower increases in linearly proportion to the amount of the injectedcurrent.

When the applied voltage reaches the turn-on voltage V_(B), the diode D2turns on. The resistance of the B portion becomes low and the appliedcurrent flows into the B portion in addition to the A portion. The Bportion of low resistance increases leakage current that does not flowthrough the active layer 5. Therefore, when the driving current exceedsthe current I_(B) corresponding to the turn-on voltage V_(B), theleakage current that does not contribute to the stimulated emissionbecomes large and thus the slope efficiency becomes low. As a result,the operation region in which the supplied current is greater than thecurrent I_(B) becomes an output saturation region in which the outputpower does not increase linearly with current and the relationshipbetween the output power and the injected electrical power is nonlinear.If the linear relationship between the current and the output power isneeded, then the voltage below the turn-on voltage V_(B) should beapplied thereto.

The surface emitting semiconductor optical device of the above structurehas the following advantages: the crystal growth process becomes simplebecause of two epitaxial growth steps used to fabricate the surfaceemitting semiconductor optical device and thus the fabrication costbecomes low; the upper DBR is formed without any crystal growth step forburying by use of a mask that may cause abnormal crystal growth and thushigh quality DBR can be formed; the position and shape of the aperturecan be controlled by use of photolithography; and the peering-off offilms due to aluminum oxidation can be improved and thus the reliabilityof the semiconductor optical device becomes high.

Areas (a) and (b) in FIG. 5 show graphs for explaining dependence of thewidth of the linear operation region on the bandgap difference betweenthe first and second conductive type semiconductor regions 3 and 7 andthe active layer 5. Curve G1 in area (a) represents current vs. voltagecharacteristic in which the turn-on voltage in the A portion is V_(A1)and the turn-on voltage in the B portion is V_(B1). Curve G2 in area (a)represents current vs. voltage characteristic in which the turn-onvoltage in the A portion is V_(A2) and the turn-on voltage in the Bportion is V_(B2). In the graph in area (a), the following condition issatisfied: V_(B2)−V_(A2)>V_(B1)−V_(A1). Curves G3 and G4 in area (b)represent the current vs. optical output power characteristicscorresponding to the Curve G1 and G2.

Curves G2 and G4 in areas (a) and (b) in FIG. 5 show that the linearoperation region defined by both current I_(A2) corresponding to theturn-on voltage V_(A2) and current I_(B2) corresponding to the turn-onvoltage V_(B2) becomes wide if the bandgap difference (the turn-onvoltage difference) between the active layer 5 and the first and secondconductive type semiconductor regions 3 and 7 is large. On the otherhand, curves G1 and G3 show that the linear operation region defined byboth current I_(A1) corresponding to the turn-on voltage V_(A1) andcurrent I_(B1) corresponding to the turn-on voltage V_(B1) becomesnarrow if the bandgap differences (the turn-on voltage difference)between the active layer 5 and the first and second conductive typesemiconductor regions 3 and 7 are small. As the difference between theturn-on voltage V_(A) and the turn-on voltage V_(B) becomes larger, thelinear operation region becomes wider. Accordingly, it is preferablethat the bandgap difference between the active layer 5 and the first andsecond conductive type semiconductor regions 3 and 7 be large.

With reference to FIG. 6, the fabrication of the semiconductor opticaldevice will be explained. As shown in area (a) in FIG. 6, a firstconductive type semiconductor layer 2, a first DBR portion 8 a, anactive layer 4, a second conductive type semiconductor layer 6 and aprotect layer 9 are grown on the semiconductor substrate 11 made of GaAs(the first crystal growth step). The above layers can be grown usingOrgano-Metallic Vapor Phase Epitaxy (OMVPE) method or Molecular BeamEpitaxy (MBE) method, for example. Then, an etching mask 10 is formed onthe protect layer 9 for forming a mesa-shaped semiconductor ridgeportion 13. For example, the material of the etching mask 10 can be madeof insulator, such as SiN or SiO₂.

As shown in area (b) of FIG. 6, the protect layer 9, the secondconductive semiconductor layer 6, the active layer 4, the firstconductive type semiconductor layer 2 are partially etched using theetching mask 10 by wet etching or dry etching to form the secondconductive semiconductor layer 7 a, the side of 5 a of the active layer5 and the side 3 e of the second semiconductor portion 3 b of the firstconductive type semiconductor region 3. After the etching, the side 7 eof the second conductive semiconductor layer 7 a, the side 5 a of theactive layer 5 and the side 3 e of the second semiconductor portion 3 bof the first conductive type semiconductor region 3 are formed. Thesemiconductor mesa portion 13 includes the active layer 5 and thesemiconductor portion 3 b. Area (b) in FIG. 6 shows the semiconductorridge portion 13 that has an inverted-mesa shape. If the crystal axisalong which the mesa extends and etchant therefor can be selectedproperly, then the etching is carried out to form another shape of thesemiconductor ridge portion 13.

As shown in area (c) of FIG. 6, the etching mask 10 and protect layer 9are removed. As shown in area (d) of FIG. 6, the remaining portion ofthe second conductive type semiconductor region 7 is grown and then thesecond DBR portion 8 b is grown thereon (the second crystal growth). Theelectrodes 21 and 23 are, finally, formed on the second DBR portion 8 band the backside of the semiconductor substrate 11, respectively, tocomplete the semiconductor optical device 1.

The semiconductor optical device 1 does not need the current blockportion as used in buried heterostructure semiconductor lasers in FIG.19. As seen from the foregoing explanations, the step of growing thecurrent block portion is not needed in the fabrication of thesemiconductor optical device according to the present embodiment, ascompared to the fabrication of the buried heterostructure semiconductorlasers shown in FIG. 19. Therefore, the semiconductor optical devicepermits the yield improvement and cost reduction because the number ofthe epitaxial growth steps is reduced (twice in the present embodiment).

Area (a) of FIG. 18 shows a semiconductor optical device including asecond DBR portion 40. The second DBR portion 40 may be located mainlyon the first region 3 c of the first conductive type semiconductorportion 3. The first portion 7 a of the second conductive typesemiconductor portion 7 is located between the second DBR portion 40 andthe active layer 5 and thus the second DBR portion 40 can be formed onthe planar semiconductor region. An electrode 42 is located on a secondregion 7 b of the second conductive type semiconductor portion 7 and thesecond region 7 b is provided to surround the first region 7 a. Acontact layer 17 is provided on the first region 7 a of the secondconductive type semiconductor portion 7 as well as between the electrode42 and the second region 7 b of the second conductive type semiconductorportion 7. That is, the contact layer 17 is provided between the secondDBR portion and the second conductive type semiconductor region 7. Sincethe contact layer 17 is located on both first and second region 7 a and7 b of the second conductive type semiconductor portion 7, carriers fromthe electrode 42 flow through the contact layer 7 into the active layer5. Therefore, the effective resistance between the active layer 5 andthe electrode 42 becomes small.

In buried heterostructure semiconductor optical devices as shown in, forexample, Publication 1, the injected carriers are blocked by the currentblocking region having a pn junction constituted by a p-typesemiconductor layer and an n-type semiconductor layer which areinversely biased. However, in the laser of this type, a plurality of pnjunctions should be formed to realize a current blocking, which leads toa large parasitic capacitance, and prevents the high-speed operation ofthe buried heterostructure semiconductor optical devices. On the otherhand, since the semiconductor optical device according to the presentembodiment blocks the injected carriers by use of the single pnjunction, biased forwardly, constituted by the first and secondconductive type semiconductor regions 3 and 7, only one pn junction isneeded for current blocking and thus the capacitance is decreasedcompared with the conventional buried heterostructure semiconductoroptical devices. Therefore, the semiconductor optical device 1 canoperate at higher speed.

As described above, the surface of GaAs semiconductor can be provided byGaAs substrates. Since available GaAs substrates are large-sized such as6 inch in a diameter and are high quality and inexpensive, theproductivity improvement and cost reduction of the semiconductor opticaldevice 1 are achieved and large-scaled integration including thesemiconductor optical device 1 can be realized easily.

FIG. 7 is a view showing a modified semiconductor optical device 1 aaccording to the present embodiment. Area (a) in FIG. 7 shows a crosssectional view. Area (b) in FIG. 7 shows a band diagram, taken alongIIIa-IIIa in area (a), for the modified semiconductor optical device 1a. Area (c) in FIG. 7 shows a refractive index diagram, taken alongIIIb-IIIb in area (a), for the modified semiconductor optical device 1a. The semiconductor optical device 1 a further comprises a first spacerlayer 25 and a second spacer layer 27. The first spacer layer 25 isprovided between the first conductive type semiconductor region 3 andthe active layer 5. The second spacer layer 27 is provided between thesecond conductive type semiconductor region 7 and the active layer 5.The second semiconductor portion 3 b of the first conductive typesemiconductor region 3, the active layer 5, the first spacer layer 25and the second spacer layer 27 constitute a semiconductor mesa portion13 a.

The first spacer layer 25 is made of material having a bandgap energybetween that of the first conductive type semiconductor region 3 andthat of the active layer 5. The second spacer 27 is made of materialhaving a bandgap energy between that of the second conductive typesemiconductor region 7 and that of the active layer 5. Carriers areinjected into the active layer 5 from the first and second conductivetype semiconductor regions 3 and 7 through the first and second spacerlayers 25 and 27. As shown in area (b) of FIG. 7, the injected carriersin the modified semiconductor optical device 1 a are confined into theactive layer 5 by the first and second spacer layers 25 and 27.

The first separation layer 25 and the second separation layer 27 enablethe efficient confinement of current, and enhance the confinement ofcurrent, leading to improvements of lasing characteristics such as athreshold current, reduction and a less dependence on temperature. Ifthe active layer 5 has a quantum well structure constituted by thinfilms, the optical confinement factor is small. But, by introducing thefirst and second separation layers 25 and 27, the optical confinementperformance of the quantum well structure increases significantly,thereby drastically improving the oscillation characteristics.

Second Embodiment

Area (a) in FIG. 8 is a perspective view showing a semiconductor opticaldevice according to the second embodiment. Area (b) in FIG. 8 shows astructure of a first DBR portion and area (c) in FIG. 8 shows astructure of a first DBR portion. An XYZ coordinate system S is depictedin FIG. 8. FIG. 9 is a view for the semiconductor optical deviceaccording to the second embodiment. Area (a) in FIG. 9 shows a crosssectional view taken along IV-IV in FIG. 8. Area (b) in FIG. 9 shows aband diagram, taken along Va-Va in area (a), for the semiconductoroptical device according to the second embodiment. Area (c) in FIG. 9shows a refractive index diagram, taken along Vb-Vb in area (a), for thesemiconductor optical device according to the second embodiment. FIGS. 8and 9 shows a semiconductor optical device 51, such as a semiconductorlaser.

The semiconductor optical device 51 comprises a first conductive typesemiconductor region 53, an active layer 55, a second conductive typesemiconductor region 57, a first DBR portion 58 and a second DBR portion60. As shown in area (b) of FIG. 8, the first DBR portion 58 includesfirst DBR layers 62 and second DBR layers 64, and the first and secondDBR layers 62 and 64 are alternately arranged. As shown in area (c) ofFIG. 8, the second DBR portion 60 includes third DBR layers 66 andfourth DBR layers 68, and the third and fourth DBR layers 66 and 68 arealternately arranged. The first conductive type semiconductor region 53,the active layer 55 and the second conductive type semiconductor region57 are provided between the first DBR portion 58 and the second DBRportion 60. The first conductive type semiconductor region 53 isprovided on the surface of a GaAs substrate and has a first region 53 aand a second region 53 b provided to surround the first region 53 a. Thefirst region 53 a extends in the y-direction. The active layer 55 isprovided on the first region 53 a of the first conductive typesemiconductor region 53. The active layer 55 has a side 55 a. The secondconductive type semiconductor region 57 is provided on the second region53 b of the first conductive type semiconductor region 53, and the side55 a and top 55 b of the active layer 55. The second conductive typesemiconductor region 57 and the second region 53 b of the firstconductive type semiconductor region 53 form a pn junction. The activelayer 55 is made of III-V compound semiconductor.

The first conductive type semiconductor region 53 is made of III-Vcompound semiconductor, the bandgap of which is greater than that of theactive layer 55. The second conductive type semiconductor region 57 ismade of III-V compound semiconductor, the bandgap of which is greaterthan that of the active layer 55. As seen from the bandgap diagram shownin area (b) of FIG. 9, the first conductive type semiconductor region 53and second conductive type semiconductor region 57 confine carriers tothe active layer 55. Consequently, the first conductive typesemiconductor region 53 works as a cladding layer of the firstconductive type and the second conductive type semiconductor region 57works as a cladding layer of the second conductive type. In the activelayer 55, the confined carriers injected from the first conductive typesemiconductor region 53 and the second conductive type semiconductorregion 57 are recombined to generate light.

As shown in area (c) of FIG. 9, the refractive index of the firstconductive type semiconductor region 53 is smaller than that of activelayer 55. The refractive index of the second conductive typesemiconductor region 57 is also smaller than that of active layer 55.Accordingly, the first conductive type semiconductor region 53 and thesecond conductive type semiconductor region 57 confine light from theactive layer 55 in the active layer 55 in both x and y directions.Consequently, the first conductive type semiconductor region 53 and thesecond conductive type semiconductor region 57 act as optical claddinglayers.

The structure of the active layer 55 may be the bulk structure of asingle layer, the single quantum well structure of a single quantum welllayer and the multiple quantum well structure of a plurality of welllayers and barrier layers which are alternately arranged.

The semiconductor optical device 51 further comprises a semiconductorsubstrate 61. For example, GaAs substrates can be used as thesemiconductor substrate 61. On the primary surface 61 a of thesemiconductor substrate 61, the first conductive type semiconductorregion 53 is provided. The materials of the first and second DBR layers24 and 26 can be used for materials of the first and second DBR layers62 and 64. The materials of the third and fourth DBR layers 28 and 30can be used for materials of the third and fourth DBR layers 62 and 64.

The semiconductor optical device 51 further comprises electrodes 71 and73. The electrode 71 is provided on the second DBR portion 60 of thesecond conductive type and has an aperture 71 a that light from theactive layer passes through. The electrode 73 is provided on thebackside 61 b of the semiconductor substrate 61. If required, thesemiconductor optical device 51 may further comprise a contact layer andthe bandgap of the contact layer is smaller than that of thesemiconductor conductive type semiconductor layer 57. Accordingly, thecontact layer and the electrode 71 can form an excellent ohmic contacttherebetween. Material of the contact layer is, for example, p typeGaAs.

In the semiconductor optical device 51, since the first conductive typesemiconductor region 53 and the second conductive type semiconductorregion 57 each has a bandgap energy greater than that of the bandgap ofthe active layer 55, the built-in potential of the pn junctionconstituted by the first conductive type semiconductor region 53 and thesecond conductive type semiconductor region 57 is greater than that ofthe pin junction constituted by the first conductive type semiconductorregion 53, the active layer 55 and the second conductive typesemiconductor region 57. Therefore, the semiconductor optical device 51has an equivalent circuit as in FIG. 3 and operates in the same manneras the semiconductor optical device 1. Namely, carriers from the firstconductive type semiconductor region 53 and the second conductive typesemiconductor region 57 are blocked by the pn junction constituted bythe first conductive type semiconductor region 53 and the secondconductive type semiconductor region 57, and are exclusively injectedand confined into the active layer 55. Thus, the semiconductor opticaldevice 51 is effective in confining the carriers into the active layer55.

The method of fabricating the semiconductor optical device 51 isdifferent from the method of fabricating the semiconductor opticaldevice 1 (FIG. 6) in the following: the method of fabricating thesemiconductor optical device 51 does not include the etching of thefirst conductive type semiconductor region 53 in the etching processshown in area (b) of FIG. 6. This method does not include the growth ofthe current block portion (as shown in area (c) in FIG. 19) and thus thenumber of epitaxial growth steps is decreased like the case of thesemiconductor optical device 1.

In the semiconductor optical device shown in area (b) of FIG. 18, asecond DBR portion 90 is located only on the active layer 55 provided onthe first region 53 c of the first conductive type semiconductor region53 and the first region 57 a of the second conductive type semiconductorregion 57 is located between the second DBR portion 90 and the activelayer 55. Accordingly, the second DBR portion 90 is formed on the planarsemiconductor region. The contact layer is provided on the first region57 a pf the second conductive type semiconductor region 57 as well asbetween the second region 57 b of the second conductive typesemiconductor region 57 and the electrode 92. That is, the contact layeris also provided between the second DBR portion 90 and the secondconductive type semiconductor region 57. Since the contact layer isprovided on the first and second regions 57 a and 57 b of the secondconductive type semiconductor region 57, carriers fro the electrode flowthrough the contact layer to the active layer. The substantialresistance between the active layer 55 and the electrode 92 becomessmall.

Since the semiconductor optical device 51 according to the presentembodiment blocks the injected carriers by use of the single pn junctionwhich is biased forwardly and is constituted by the first and secondconductive type semiconductor regions 53 and 57, only one pn junction isneeded for current blocking and thus the capacitance is decreasedcompared with the conventional buried heterostructure semiconductoroptical devices. Therefore, the semiconductor optical device 51 canoperate at high speed.

As described above, the surface of GaAs semiconductor can be provided byGaAs substrates. Since available GaAs substrates are large-sized such assix inches in a diameter and are high quality and inexpensive, theproductivity improvement and cost reduction of the semiconductor opticaldevice 51 are achieved and large-scaled integration of the semiconductoroptical device 51 can be easily realized.

The inventors have found that the present structure can improve thetemperature characteristics of the semiconductor optical device 51. FIG.10 shows calculated results of threshold current dependence on bandgapdifference ΔEg for a modified semiconductor optical device according tothe present embodiment. Areas (a) and (b) in FIG. 10 show graphsrepresenting a relationship between the oscillating threshold currentI_(th) and the bandgap difference ΔEg between the first and secondconductive type semiconductor regions 53, 57 and the active layer 55.The graph in area (a) of FIG. 10 shows data calculated at the devicetemperature of 25 Celsius degree, and the graph in area (b) of FIG. 10shows data calculated at the device temperature of 85 Celsius degree.The material of the first and second conductive type semiconductorlayers 53 and 57 can be Ga_(0.51)In_(0.49)P and the active layer 55 canbe made of an Al_(X)Ga_(1-X)As single film. The bandgap Eg ofAl_(X)Ga_(1-X)As of the active layer 55 is changed as shown in FIG. 11and the bandgap difference ΔEg is adjusted by changing the bandgap Eg.

As shown in areas (a) and (b) of FIG. 10, if the bandgap difference ΔEgis equal to or more than 0.3 eV, the threshold current I_(th) remainslow regardless of the operating temperature. The threshold currentI_(th) is kept to be as small as 18 mA even in high temperature of 85Celsius degree if the bandgap difference ΔEg is equal to or more than0.3 eV.

FIG. 12 shows graphs representing the calculated results of the currentvs. optical output characteristics at the bandgap values listed in FIG.11. Area (a) in FIG. 12 shows a graph representing the calculatedresults of the current vs. optical output characteristics at thetemperature of 25 Celsius degree. Area (b) in FIG. 12 shows a graphrepresenting the calculated results of the current vs. optical outputcharacteristics at the temperature of 85 Celsius degree. In areas (a)and (b) of FIG. 12, curves G11 and G21 correspond to the bandgapdifference ΔEg of 0.24 eV. Curves G12 and G22 correspond to the bandgapdifference ΔEg of 0.27 eV. Curves G13 and G23 correspond to the bandgapdifference ΔEg of 0.30 eV. Curves G14 and G24 correspond to the bandgapdifference ΔEg of 0.33 eV. curves G15 and G25 correspond to the bandgapdifference ΔEg of 0.36 eV. Curves G16 and G26 correspond to the bandgapdifference ΔEg of 0.49 eV. As seen from FIG. 12, the greater the bandgapis, the larger the emission efficiency is. This is because the largeband gap difference ΔEg permits the pn junction between the firstconductive type semiconductor region 53 and the second conductive typesemiconductor region 57 to effectively block carriers, thereby confiningthe carriers into the active layer 55.

The inventors have also studied optical semiconductor devices formed onInP substrates. In a specific optical semiconductor device, InP is usedas material of the first and second semiconductor regions andGa_(0.39)In_(0.61)As_(0.845)P_(0.155) is used as material of the activelayer. The bandgap energy difference ΔEg between the active layer andthe first and second semiconductor regions is 0.55 eV. FIG. 13 is acalculated result showing the current vs. optical output characteristicsof the semiconductor optical device made using semiconductor materiallattice-matched to InP of the substrate. Curve G31 indicates datameasured at 25 Celsius degree and curve G32 indicates data measured at85 Celsius degree. As shown in FIG. 13, in a semiconductor opticaldevice using semiconductor material lattice-matched to InP of thesubstrate, the optical power from the semiconductor optical device issaturated in a range of a few milli-watts even at a relatively lowdevice temperature. Therefore, this device cannot be applied to apractical use. This saturation may be caused by leakage current flowingoutside the active layer in the semiconductor optical device includingsemiconductors grown on the InP substrate. On the other hand, if thebandgap energy difference ΔEg is greater than 0.55 eV in thesemiconductor optical device 51 according to the present embodiment,carriers are effectively confined into the active layer.

Since the active layer 55 and the first and second conductive typesemiconductor regions 53, 57 are provided on the surface of GaAssubstrate, the semiconductor optical device 51 has the above advantage.FIG. 14 lists the combinations of material that can provide theadvantage. The bandgap energy difference ΔEg by use of materials listedin FIG. 14 can be more than 0.3 eV (or 0.55 eV) by adjustingcompositions of the materials. The material listed in FIG. 14 can beused for the semiconductor optical device 1 and other semiconductoroptical devices according to the embodiments without limiting to thesemiconductor optical device 51. These semiconductor optical deviceshave superior temperature characteristics as good as the semiconductoroptical device 51.

Specific combinations selected from FIG. 14 are further explained below.In the semiconductor optical device including the active layer 55 madeof III-V compound semiconductor containing at least nitrogen, thefollowing materials having high bandgap energy can be used for the firstand second conductive semiconductor regions 53 and 57: AlGaInP, GaInP,AlGaAs and GaInAsP. Especially, the bandgap energies of AlGaInP, AlGaAsand GaInAsP are greater than that of InP and these materials provide thefollowing bandgap energy ranges: 1.9 eV to 2.3 eV, 1.42 eV to 2.16 eVand 1.42 eV to 1.9 eV, respectively. GaInP has the high bandgap energyof 1.9 eV. If one of the above materials is used for the firstsemiconductor region 53 and the second semiconductor region 57, thebandgap difference ΔEg can be made larger, leading to a strong carrierconfinement into active layer 55. Consequently, the semiconductoroptical device 51 exhibits excellent temperature characteristics. Inaddition, the above materials permit the turn-on voltage differencebetween the A and B portions shown in FIG. 3 to increase, so that theliner operation region becomes large.

The active layer 55 made of the III-V compound semiconductor containingat least nitrogen in the semiconductor optical device can generate lightof a wavelength longer than 1 micrometer, such as 1.3 or 1.55 micrometerband for optical communications. An example of material preferable forthe active layer 55 is III-V compound semiconductors containing at leastnitrogen, gallium and arsenic. These III-V compound semiconductors havelattice constants equal to or close to the lattice constant of GaAs andtherefore can be grown on GaAs substrates with excellent crystallinequality. Examples of the III-V compound semiconductors containing atleast nitrogen, gallium and arsenic are GaNAs and GaInNAs. The III-Vcompound semiconductors containing at least nitrogen, gallium andarsenic can be lattice-matched to GaAs by adjusting their compositionsproperty. These III-V compound semiconductors are used for generatinglight of a long wavelength from 1 to 1.6 micrometers.

The active layer 55 can be made of material containing phosphorus and/orantimony in addition to the constituents of GaNAs or GaInNAs. Antimonycan work as surfactant and can suppress three-dimensional growth ofGaNAs and GaInNAs crystal, thereby improving the crystal quality.Phosphorus can improve the crystal quality and reliability by reducingthe local crystal strain in GaNAs and GaInNAs. Phosphorus contributes toa the introduction of nitrogen into the active layer 55 during crystalgrowth. Examples of material for the active layer 55 are listed below:GaNAsP, GaInNAsP, GaNAsSb, GaInNAsSb, GaNAsSbP, GaInNAsSbP and so on.

The active layer 55 can be made of III-V compound semiconductor notcontaining nitrogen, such as AlGaInP, GaInP, AlGaAs, GaAs, GaInAsP orGaInAs. The active layer 55 of the above material is used for generatingred to near infrared light of wavelength, 0.6 to 1 micrometer. In thisoptical semiconductor device, AlGaInP, GaInP, AlGaAs or GaInAsP can beused for the first conductive type semiconductor region 53 and thesecond conductive type semiconductor region 57. Since the AlGaInP has alarge bandgap up to 2.3 eV depending on its composition, the firstconductive type semiconductor region 53 and the second conductive typesemiconductor region 57 made of AlGaInP permits the bandgap energydifference ΔEg to increase.

FIG. 15 is a view showing another modified semiconductor optical device.Area (a) in FIG. 15 shows a cross sectional view. Area (b) in FIG. 15shows a band diagram, taken along VIa-VIa in area (a), for thesemiconductor optical device according to this embodiment. Area (c) inFIG. 14 shows a refractive index diagram, taken along VIb-VIb in area(a), for the semiconductor optical device according to the presentembodiment. A semiconductor optical device 51 a includes first andsecond spacer layers 75 and 77. The first spacer layer 75 is providedbetween the active layer 55 and the first conductive type semiconductorregion 53 and the second spacer layer 77 is provided between the activelayer 55 and the second conductive type semiconductor region 57. Theactive layer 55 and the first and second spacer layers 75 and 77constitute a semiconductor mesa portion 63 a.

The first and second spacer layers 75 and 77 have the same structure andfunctions as the first and second spacer layers 25 and 27 described inthe first embodiment. The first spacer layer 75 is made of materialhaving a bandgap energy between that of the first conductive typesemiconductor layer 53 and that of the active layer 55. The secondspacer layer 77 is made of material having a bandgap energy between thatof the second conductive type semiconductor layer 57 and that of theactive layer 55. As shown in area (c) of FIG. 15, the first spacer layer75 has a refractive index between that of the active layer 55 and thatof the first conductive type semiconductor layer 53, and the secondspacer layer 77 has a refractive index between that of the active layer55 and that of the second conductive type semiconductor layer 57.Therefore, the first and second spacer layers 75 and 77 permit thecurrent confinement into the active layer 55 separately. These spacerlayers 75 and 77 enhance the confinement of the light into the activelayer 55, which leads to the improvements of the lasing characteristicssuch as a threshold current reduction and a less dependence ontemperature.

In the present embodiment, the first conductive type semiconductorregion 53 can be made of material that functions as a etch stopper foretching active layer 55 and the first and second spacer layers 75 and77. In buried hetero-structures as disclosed in Publication 1, etchingthe active layer into a mesa-shape is carried out using wet etching inmost cases to avoid the damage of semiconductor portions. Since wetetching is, however, isotropic, the etchant etches the active layer inboth horizontal and vertical directions. Consequently, the width of theactive layer is varied depending on the mesa depth. For example, in thefabrication of the semiconductor laser device as described inPublication 1, etchant of Br-methanol is generally used to etch theactive layer made of GaInAsP. But, the n-type InP cladding layer isetched by the etchant of Br-methanol and this etchant can etch not onlythe active layer but also the n-type InP cladding layer located justbelow the active layer. Etching rates in wet etchings are varieddepending on even slight fluctuations of the etchant temperature, theetchant concentration and the mixture ratios of etchant. Especially,Br-methanol is volatile and thus the etching rate thereof is easilyvaried. In addition, etching rates on the wafer cannot be constant allover the surface of the wafer due to the difference of stirring speed ofthe etchant between the center the periphery of the wafer. Due to thisvariation of etching rate, the mesa depth varies in every production andall over the surface of the wafer. Consequently, the width of the activelayer is also varied. Accordingly, precise control of the width of theactive layer is difficult, which would affect the reproducibility anduniformity of laser characteristics.

On the other hand, since the semiconductor optical device 51 accordingto the present embodiment uses the GaAs substrate, AlGaInP or GaInP canbe used for the first conductive type semiconductor region 53, AlGaAs,GaAs and GaInAsP can be used for the first and second spacer layers 75,77 and AlGaAs, GaAs, GaInAsP, GaInAs and III-V compound semiconductorcontaining at least nitrogen, gallium and arsenic can be used for theactive layer 55. In this case, the first conductive type semiconductorregion 53 works as an etch stopper in etchings of the active layer 55the first and second spacer layers 75, 77 by use of appropriate etchant(for example, phosphoric-acid-based etchant), whereby the active layer55 and the first and second spacer layers 75 and 77 are etched withoutetching of the first conductive type semiconductor region 53. As aresult, the excellent reproducibility and uniformity of the mesa depthof the active layer 55 and the first and second spacer layers 75 and 77are obtained and accordingly the better reproducibility and uniformityof the width of the active layer 55 are obtained, thereby improving thereproducibility and uniformity of laser characteristics.

FIG. 16 is a cross sectional view showing still another modifiedsemiconductor optical device. In this modified semiconductor opticaldevice, the first conductive type semiconductor region 54 has a thirdregion 54 a and fourth region 54 b. The second conductive typesemiconductor region 58 has a first region 58 a and a second region 58b. The third region 54 a of the first conductive type semiconductorregion 54 has an interfacial region 54 c on which the second conductivetype semiconductor region 58 is provided. The first region 58 a of thesecond conductive type semiconductor region 58 has interfacial regions58 c and 58 d on which the first conductive type semiconductor region 54is provided. In the first conductive type semiconductor region 54, thedopant concentration of the third region 54 a is different from that ofthe fourth region 54 b. In the second conductive type semiconductorregion 58, the dopant concentration of the first region 58 a isdifferent from that of the second region 58 b.

FIG. 17 schematically shows the current vs. voltage and the current vs.optical output power characteristics for the semiconductor opticaldevice. Curve G5 in area (a) in FIG. 17 indicates a current vs. voltagerelationship of the semiconductor optical device 51 b. Curve G6 in area(a) in FIG. 17 indicates a current vs. voltage relationship of thesemiconductor optical device, unlike in the case of the semiconductoroptical device 51 b, which does not have the third and the first regions54 a and 58 a doped heavily. Curves G7 and G8 in area (b) in FIG. 17indicate current vs. optical power that correspond to curves G5 and G6,respectively. In the semiconductor optical device 51 b, since the dopantconcentrations of the third region 54 a and the first region 58 a aredifferent from those of the regions 54 b and 58 b, the quasi-Fermilevels and resistance values of the third region 54 a and first region58 a are different from those of the regions 54 b and 58 b,respectively. Due to this difference, the turn-on voltages of the pnjunction constituted by the first conductive type semiconductor region54 and the second conductive type semiconductor region 58 and the pinjunction constituted by the first conductive type semiconductor region54, the active region 55 and the second conductive type semiconductorregion 58 are changed accordingly. Furthermore, the series resistance ofthe semiconductor optical device 51 b is also changed in the linearoperation region which appears after turning on the pin junctionportion. For example, if the third region 54 a and first region 58 a aredoped more heavily than the regions 54 b and 58 b, the resistance ofthese cladding parts becomes low, whereby the turn-on voltages of the pnjunction and pin junction are lowered. As a result, as shown in areas(a) and (b) of FIG. 17, the turn-on voltage V_(A2) of the pin junctionportion is changed to a lower turn-on voltage V_(A3) and the turn-onvoltage V_(B2) of the pn junction portion is changed to a lower turn-onvoltage V_(B3). Furthermore, since the resistance values of the thirdregion 54 a and first region 58 a are also lowered, the slope of curveof the current vs. voltage relationship (series resistance) becomessmall in the linear operation region after turning on the pin junctionportion. Consequently, since the current at which the pn junctionportion is turned on is increased from current I_(B2) to I_(B3), thewidth of the linear operation region in the current vs. optical powerrelationship is enlarged, thereby increasing the optical power. Asdescribed in above, turn-on voltages and the above series resistancevalues are changed by changing the dopant concentrations of the regions54 a and 58 a, so that the range of the linear operation region can bechanged as required. In the above example, although the dopantconcentrations of both the regions 54 a and 58 a are changed, the dopantconcentration of one of the regions 54 a and 58 a may be changed,thereby providing the similar advantages as above.

The turn-on voltages as above can be also adjusted by the change of thedopant concentration of the whole of the first conductive typesemiconductor region 54 (and/or the whole of the second conductive typesemiconductor region 58). Besides, the turn-on voltages can be alsoadjusted by changing the dopant concentration of only one of the firstconductive type semiconductor region 54 and the second conductive typesemiconductor region 58. In the above example of the optical device 51b, dopant concentration changes are performed in only necessary parts ofthe first conductive type semiconductor region 54 and the secondconductive type semiconductor region 58. This is preferable forminimizing the degradation of other device characteristics caused by thedopant concentration change. The semiconductor optical device 1 in thefirst embodiment, the semiconductor optical device 51 b in the presentembodiment and other semiconductor optical device according to thepresent invention can be formed by use of the control method of changingdopant concentrations of parts or the whole of the first conductive typesemiconductor region and the second conductive type semiconductorregion.

Having described the first and second embodiments with reference to anumber of modifications, the present invention is not limited to theabove. In still another semiconductor optical device, the firstconductive type semiconductor region and the second conductive typesemiconductor region can be made of material not containing aluminum. Ifmaterial containing aluminum is used for the first conductive typesemiconductor region and/or the second conductive type semiconductorregion, the interfaces among the first and second conductive typesemiconductor regions and the active layer and spacer layers and betweenthe first and second conductive type semiconductor regions are oxidizedas time goes on, whereby the number of nonradiative recombinationcenters are increased. Consequently, the optical characteristics and thereliability of the semiconductor optical device are deteriorated. Inaddition, if the first conductive type semiconductor region is made ofmaterial containing aluminum, the surface of the first conductive typesemiconductor region may be easily oxidized and it is difficult to growthe second conductive type semiconductor region thereon due to thesurface oxidization. On the other hand, if the first and secondconductive type semiconductor regions are made of material notcontaining aluminum, the generation of nonradiative recombination centerat the interface regions is avoided and the second conductive typesemiconductor region having excellent quality is grown thereon.Furthermore, if the second conductive type semiconductor region is madeof material not containing aluminum, the contact layer and the remainingof the second conductive type semiconductor region both having excellentquality are grown thereon in the second crystal growth step. Forexample, GaInP and GaInAsP can be used as a material not containingaluminum.

The first conductive type semiconductor region has a part contacting thesecond conductive type semiconductor region (for example, the thirdregion 54 a in FIG. 16) and the second conductive type semiconductorregion has a part contacting the first conductive type semiconductorregion (for example, the first region 58 a in FIG. 16). These parts canbe made of material not containing aluminum. This structure provides thesame advantages as those of the semiconductor optical device includingthe whole of the first conductive type semiconductor region and thewhole of the second conductive type semiconductor region both made ofmaterial not containing aluminum. Since the parts of the first andsecond conductive type semiconductor regions that are not contacted withother semiconductor portions can be made of material containingaluminum, these regions can be made of material containing aluminum ornot containing aluminum, which increases the flexibility in designingsemiconductor optical devices. Examples of material not containingaluminum are listed as follows: GaInP, GaAs, GaInAsP, GaInAs and so on.

In addition to the above structures, the active layer and spacer layersmay be made of material not containing aluminum. If these layers aremade of material not containing aluminum, all the layers in thesemiconductor optical device do not contain aluminum. Then, thissemiconductor optical device is free from aluminum oxidization relatedmatters, thereby providing the semiconductor optical device with highperformance and reliability. Examples of material of the active layerare listed below: GaAs, GaInAs, GaInAsP and so on. Examples of materialof the spacer layers are listed as follows: GaAs and GaInAsP.

If the active layer has a quantum well structure, the active layer mayhave a composition such that the lattice mismatch between the activelayer and the substrate or base layer is from +3% to −3%. Since thethickness of the well layers can be very thin and thinner than thecritical thickness, the above range of lattice mismatch does notgenerate crystal defects such as misfit dislocation, and a goodcrystalline quality can be maintained. In this case, since therestriction on the lattice match condition between the active layer andthe base layer is alleviated, these layers can be made of a wider rangeof materials. Accordingly, the bandgap energy of the active layer can bechanged more widely, leading to more flexibility in designing thesemiconductor optical devices.

Having described and illustrated the principle of the invention in apreferred embodiment thereof, it is appreciated by those having skill inthe art that the invention can be modified in arrangement and detailwithout departing from such principles. For example, the semiconductoroptical device encompasses not only semiconductor lasers, but alsosemiconductor light-emitting diodes, semiconductor optical amplifiers,semiconductor electro-absorption modulators, semiconductor optical waveguide, semiconductor optical integrated devices and the like, as well asintegrated devices integrating these devices. Details of structures ofthese devices can be modified as necessary. We therefore claim allmodifications and variations coming within the spirit and scope of thefollowing claims.

1. A semiconductor optical device comprising: a first conductive typesemiconductor region including a first semiconductor portion and asecond semiconductor portion, the first semiconductor portion having afirst region and a second region, the first and second regions beingarranged along a predetermined plane, the second semiconductor portionbeing provided on the first region of the first semiconductor portion,and the second semiconductor portion having a side; an active layerprovided on the second semiconductor portion of the first conductivetype semiconductor region, the active layer having a top and a side, anda bandgap energy of the first conductive type semiconductor region beinggreater than that of the active layer; a second conductive typesemiconductor region provided on the second region of the firstsemiconductor portion of the first conductive type semiconductor region,the side of the second semiconductor portion of the first conductivetype semiconductor region, the top and side of the active layer, thesecond region of the first conductive type semiconductor region and thesecond conductive type semiconductor region constituting a pn junction,and a bandgap energy of the second conductive type semiconductor regionbeing greater than that of the active layer; a first distributed Braggreflector portion including first distributed Bragg reflector layers andsecond distributed Bragg reflector layers, and the first and seconddistributed Bragg reflector layers being arranged alternately; and asecond distributed Bragg reflector portion including third distributedBragg reflector layers and fourth distributed Bragg reflector layers,the third and fourth distributed Bragg reflector layers being arrangedalternately, the first conductive type semiconductor region, and theactive layer and the second conductive type semiconductor region beingprovided between the first distributed Bragg reflector portion and thesecond distributed Bragg reflector layers.
 2. The semiconductor opticaldevice according to claim 1, wherein a difference between a bandgapenergy of the first conductive type semiconductor region and that of theactive layer is equal to or more than 4.8×10⁻²⁰ Joule and a differencebetween a bandgap energy of the second conductive type semiconductorregion and that of the active layer is equal to or more than 4.8×10⁻²⁰Joule.
 3. The semiconductor optical device according to claim 1, whereinthe first conductive type semiconductor region is made of AlGaAs,AlGaInP, GaInP and GaInAsP, the second conductive type semiconductorregion is made of AlGaAs, AlGaInP, GaInP and GaInAsP, and the activelayer is made of III-V compound semiconductor containing at leastnitrogen.
 4. The semiconductor optical device according to claim 1,further comprising: a second conductive type semiconductor contact layerprovided on the second conductive type semiconductor region; and anelectrode provided on the second conductive type semiconductor contactlayer.
 5. The semiconductor optical device according to claim 1, whereinthe first conductive type semiconductor region includes a third regionand a fourth region, the third region and the second conductive typesemiconductor region constitute the pn junction, and a dopantconcentration of the third region is different from that of the fourthregion.
 6. The semiconductor optical device according to claim 1,wherein the second conductive type semiconductor region includes a firstregion and a second region, the first region of the second conductivetype semiconductor region and the first conductive type semiconductorregion constitute the pn junction, and a dopant concentration of thefirst region of the second conductive type semiconductor region isdifferent from that of the second region of the second conductive typesemiconductor region.
 7. The semiconductor optical device according toclaim 1, further comprising: a first spacer layer provided between theactive layer and the first conductive type semiconductor region; and asecond spacer layer provided between the active layer and the secondconductive type semiconductor region.
 8. The semiconductor opticaldevice according to claim 1, wherein the semiconductor optical deviceincludes at least one of a semiconductor laser, a light emitting diode,a semiconductor optical amplifier, an electro-absorption type modulatorand a semiconductor optical waveguide.